Physical Modeling of GaAs MESFET’s in an Integrated CAD Environment: From Device Technology to Microwave Circuit Performance

IEEE Transactions on Microwave Theory and Techniques

Volumn 37, Issue 3, 1989, Pages 457-468

  Ghione, Giovanni ^a   Naldi, Carlo U ^b   Filicori, Fabio ^c  

^a POLITECNICO DI MILANO   (Italy)

^b POLITECNICO DI TORINO   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS, LINEAR--COMPUTER AIDED ANALYSIS; ELECTRIC NETWORKS, NONLINEAR--COMPUTER AIDED ANALYSIS; ELECTRIC NETWORKS--TRANSMISSION LINE THEORY; TRANSISTORS, FIELD EFFECT--COMPUTER SIMULATION;

GALLIUM ARSENIDE MESFET MODELING; INTEGRATED CAD; LARGE SIGNAL MESFET MODEL; MICROWAVE PERFORMANCE PREDICTION; SMALL SIGNAL MODELS;

INTEGRATED CIRCUITS, MONOLITHIC;

EID: 0024629334     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.21615     Document Type: Article

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