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Volumn 30, Issue 2, 1983, Pages 154-159

Theoretical Analysis of the DC Avalanche Breakdown in GaAs MESFET's

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0020706514     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1983.21089     Document Type: Article
Times cited : (33)

References (18)
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    • R. Yamamoto, A. Higashisaka, and F. Hasegawa, “Light, emission and burnout characteristics of GaAs power MESFET's,” IEEE Trans. Electron Devices, vol. ED-25, no. 6, pp. 567-573, 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25 , Issue.6 , pp. 567-573
    • Yamamoto, R.1    Higashisaka, A.2    Hasegawa, F.3
  • 2
    • 0017982603 scopus 로고
    • Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure
    • T. Furutsuka, T. Tsuji, and F. Hasegawa, “Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure,” IEEE Trans. Electron Devices, vol. ED-25, no. 6, pp. 563-567, 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25 , Issue.6 , pp. 563-567
    • Furutsuka, T.1    Tsuji, T.2    Hasegawa, F.3
  • 5
    • 0018961516 scopus 로고
    • Prebreakdown phenomena in GaAs epitaxial layers and FET's
    • C. Tsironis, “Prebreakdown phenomena in GaAs epitaxial layers and FET's,” IEEE Trans. Electron Devices, vol. ED-27, no. 1, pp. 277-282, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.1 , pp. 277-282
    • Tsironis, C.1
  • 6
    • 0018259871 scopus 로고
    • Maximum electric field in high-field domain
    • M. Shur, “Maximum electric field in high-field domain,” Electron. Lett., vol. 14, pp. 521-522, 1978.
    • (1978) Electron. Lett. , vol.14 , pp. 521-522
    • Shur, M.1
  • 7
    • 0019007145 scopus 로고
    • Design criteria for GaAs MESFET's related to stationary high field domains
    • L. F. Eastman, S. Tiwari, and M. S. Shur, “Design criteria for GaAs MESFET's related to stationary high field domains,” Solid-State Electron., vol. 23, pp. 383-389, 1980.
    • (1980) Solid-State Electron. , vol.23 , pp. 383-389
    • Eastman, L.F.1    Tiwari, S.2    Shur, M.S.3
  • 8
    • 0019022498 scopus 로고
    • Physical and materials limitations on burnout voltage of GaAs power MESFET
    • S. Tiwari, L. F. Eastman, and L. Rathbum, “Physical and materials limitations on burnout voltage of GaAs power MESFET,” IEEE Trans. Electron Devices, vol. ED-27, no. 6, pp. 1045-1054, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.6 , pp. 1045-1054
    • Tiwari, S.1    Eastman, L.F.2    Rathbum, L.3
  • 10
    • 0019606256 scopus 로고
    • Power-limiting breakdown effects in GaAs MESFET's
    • W. R. Frensley, “Power-limiting breakdown effects in GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-28, no. 8, pp. 962-970, 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , Issue.8 , pp. 962-970
    • Frensley, W.R.1
  • 11
    • 0018879033 scopus 로고
    • Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics
    • Jan.
    • B. Carnez, A. Cappy, A. Kaszynski, E. Constant, and G. Salmer, “Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics,” J. Appl. Phys., vol. 51, no. 1, pp. 784-790, Jan. 1980.
    • (1980) J. Appl. Phys. , vol.51 , Issue.1 , pp. 784-790
    • Carnez, B.1    Cappy, A.2    Kaszynski, A.3    Constant, E.4    Salmer, G.5
  • 12
    • 0014782014 scopus 로고
    • The potential due to a charged metallic strip on a semiconductor surface
    • F. Wasserstrom and J. McKenna, “The potential due to a charged metallic strip on a semiconductor surface,” Bell Syst. Tech. J., vol. 49, pp. 853-877, 1970.
    • (1970) Bell Syst. Tech. J. , vol.49 , pp. 853-877
    • Wasserstrom, F.1    McKenna, J.2
  • 14
    • 0018985922 scopus 로고
    • Optimization of GaAs power MESFET device and material parameters for 15-GHz operation
    • H. M. Macksey, F. H. Doerbeck, and P. C. Vail, “Optimization of GaAs power MESFET device and material parameters for 15-GHz operation,” IEEE Trans. Electron Devices, vol. ED-27, no. 2, pp. 467-471, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.2 , pp. 467-471
    • Macksey, H.M.1    Doerbeck, F.H.2    Vail, P.C.3
  • 15
    • 0014935192 scopus 로고
    • Two-dimensional analysis of substrate effects in junction FET's
    • Aug.
    • M. Reiser, “Two-dimensional analysis of substrate effects in junction FET's,” Electron. Lett., vol. 6, pp. 493-494, Aug. 1970.
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    • Reiser, M.1
  • 16
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    • Thèse de 3e cycle, Université de Lille I, Villeneuve d'Ascq Cedex, France
    • A. Cappy; Thèse de 3e cycle, Université de Lille I, Villeneuve d'Ascq Cedex, France, 1981.
    • (1981)
    • Cappy, A.1
  • 17
    • 0018442981 scopus 로고
    • Determination of the basic device parameters of a GaAs MESFET
    • H. Fukui, “Determination of the basic device parameters of a GaAs MESFET,” Bell Syst. Tech. J., vol. 58, pp. 771-797, 1979.
    • (1979) Bell Syst. Tech. J. , vol.58 , pp. 771-797
    • Fukui, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.