Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography

Physica Status Solidi (A) Applied Research

Volumn 185, Issue 2, 2001, Pages 373-382

  Mcnally, P J ^a   Tuomi, T ^b   Lowney, D ^a   Jacobs, K ^c   Danilewsky, A N ^d   Rantamaki R ^b   O'Hare, M ^a   Considine, L ^e  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b AALTO UNIVERSITY   (Finland)

^c GHENT UNIVERSITY   (Belgium)

^d Thomas Swan and Co Ltd ^*

^e THOMAS SWAN AND CO LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010599974     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200106)185:2<373::AID-PSSA373>3.0.CO;2-H     Document Type: Article

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