Effects of irradiation temperature and dose on exfoliation of H+-implanted silicon carbide

Applied Physics Letters

Volumn 75, Issue 17, 1999, Pages 2623-2625

  Gregory, R B ^a   Wetteroth, T A ^a   Wilson, S R ^a   Holland, O W ^b   Thomas, D K ^b  

^a MOTOROLA INC   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006672218     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125098     Document Type: Article

References (9)

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9. V. C. Venezia, T. E. Haynes, A. Agarwal, D. J. Eaglesham, O. W. Holland, M. K. Weldon, and Y. J. Chabal, in Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology, edited by H. R. Huff, H. Tsuya, and U. Gosele (Electrochemical Society, Pennington, NJ, 1998), p. 1385.