Impurity effects in the growth of 4H-SiC crystals by physical vapor transport

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 245-252

  Balakrishna, V ^a   Augustine, G ^a   Hopkins, R H ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRIC BREAKDOWN; HYDROGEN BONDS; IMPURITIES; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; THERMAL CONDUCTIVITY OF SOLIDS;

DEFECT DENSITY; MICROPIPE FORMATION; PHYSICAL VAPOR TRANSPORT; SATURATED VELOCITY; SECOND PHASE INCLUSIONS;

SINGLE CRYSTALS;

EID: 0033328697     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-245     Document Type: Conference Paper

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