Device models for PZT/Pt, BST/Pt, SBT/Pt, and SBT/Bi ferroelectric memories

Ferroelectrics

Volumn 225, Issue 1-4, 1999, Pages 83-90

  Scott, J F ^a   Watanabe, K ^a,b   Hartmann, A J ^a   Lamb, R N ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b SONY CORPORATION   (Japan)

Author keywords

Ferroelectrics; Interfaces; Memories; PZT; SBT; Thin films

Indexed keywords

EID: 0002373464     PISSN: 00150193     EISSN: None     Source Type: Journal    
DOI: 10.1080/00150199908009114     Document Type: Article

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