New results on layer-structure perovskite ferroelectric thin-film memories

Ferroelectrics

Volumn 201, Issue 1-4, 1997, Pages 43-53

  Scott, J F ^a   Ross, F M ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; PEROVSKITE; RANDOM ACCESS STORAGE; THIN FILMS;

ACTIVE MEMORY ELEMENTS; DYNAMIC RANDOM ACCESS MEMORIES;

FERROELECTRIC MATERIALS;

EID: 0031357102     PISSN: 00150193     EISSN: None     Source Type: Journal    
DOI: 10.1080/00150199708228352     Document Type: Article

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