Modeling of the silicon (100) thermal oxidation: From quantum to macroscopic formulation

Materials Science in Semiconductor Processing

Volumn 3, Issue 1-2, 2000, Pages 47-57

  Esteve, A ^a,c   Djafari Rouhani, M ^b   Faurous, Ph ^a   Esteve, D ^b  

^a SIGMA   (France)

^b LAAS CNRS   (France)

^c UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

Atomic scale simulation; Silicon oxidation modeling

Indexed keywords

EID: 0002332168     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00009-3     Document Type: Article

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