Modelling methodology of silicon oxidation from quantum calculations to Monte Carlo level

Microelectronics Reliability

Volumn 39, Issue 2, 1999, Pages 275-278

  Esteve A ^a,b   Djafari Rouhani, M ^a,c   Esteve D ^a  

^a LAAS CNRS   (France)

^b SIGMA+   (France)

^c UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; MONTE CARLO METHODS; OXIDATION; QUANTUM ELECTRONICS; SILICON COMPOUNDS;

OXIDE GROWTH DYNAMICS;

DIELECTRIC MATERIALS;

EID: 0345148458     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00241-8     Document Type: Article

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