A model for thermal growth of ultrathin silicon dioxide in O2 ambient: A rate equation approach

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 336-338

  Gorantla, Suresh ^a   Muthuvenkatraman, S ^a   Venkat, Rama ^a  

^a University of Nevada Las Vegas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8544262904     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658853     Document Type: Article

References (9)

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5. H. Z. Massoud, J. D. Plummer, and E. A. Irene, "Thermal oxidation of silicon in dry oxygen: Growth-rate enhancement in the thin regime (I.experimental results)," J. Electrochem. Soc., vol. 132, no. 11, p. 2685, 1985.
6. T. S. Chao, T. A. Lee, and T. F. Lei, "Measurement of ultrathin (<100 Å) oxide films by multiple-angle incident ellipsometry," J. Electrochem. Soc., vol. 138, no. 6, p. 1756, 1991.
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9. 18study of the thermal oxidation of silicon in oxygen," Appl. Phys. Lett., vol. 34, no. 4, p. 254, 1979.