(100) silicon oxidation: First principle investigation of basic mechanisms

Journal of Non-Crystalline Solids

Volumn 245, Issue 1-3, 1999, Pages 150-153

  Esteve A ^a,b   Djafari Rouhani, M ^a,c   Esteve D ^a  

^a LAAS CNRS   (France)

^b SIGMA+   (France)

^c UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DECOMPOSITION; GAS ADSORPTION; MOLECULAR DYNAMICS; OXIDATION;

MOLECULAR OXYGEN;

SILICON WAFERS;

EID: 0344718087     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00859-X     Document Type: Article

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