GaN crystals: Growth and doping under pressure

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 15-26

  Grzegory, I ^a   Bockowski, M ^a   Lucznik, B ^a   Wroblewski, M ^a   Krukowski, S ^a   Weyher, J ^a   Nowak, G ^a   Suski, T ^a,a   Leszczynski, M ^a   Teisseyre, H ^a   Litwin Staszewska, E ^a   Porowski, S ^a  

^a POLISH ACADEMY OF SCIENCES   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM; CHEMICAL POLISHING; COMPOSITION EFFECTS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031366782     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-15     Document Type: Conference Paper

References (28)