Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 24, 2000, Pages 16807-16818

  Madhavi, S ^a   Venkataraman, V ^a   Sturm, J ^b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000429977     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.16807     Document Type: Article

References (33)

1. K. Ismail, F.K. LeGoues, K.L. Saenger, M. Arafa, J.O. Chu, P.M. Mooney, and B.S. Meyerson, Phys. Rev. Lett. 73, 3447 (1994).
2. F. Schäffler, Semicond. Sci. Technol. 12, 1515 (1997).
3. E. Kasper, Surf. Sci. 174, 630 (1986).
4. C.M. Engelhardt, D. Többen, M. Aschauer, F. Schäffler, G. Abstreiter, and E. Gornik, Solid-State Electron. 37, 949 (1994).
5. Y.H. Xie, D. Monroe, E.A. Fitzgerald, P.J. Silverman, F.A. Thiel, and G.P. Watson, Appl. Phys. Lett. 63, 2263 (1993).
6. E. Murakami, K. Nakagawa, A. Nishida, and M. Miyao, IEEE Trans. Electron Devices 41, 857 (1994).
7. S.H. Song, W. Pan, D.C. Tsui, Y.H. Xie, and D. Monroe, Appl. Phys. Lett. 70, 3422 (1997).
8. W.T. Masselink, W. Kopp, T. Henderson, and H. Morkoç, IEEE Electron Device Lett. 6, 539 (1985).
9. J.A. Cooper and D.F. Nelson, IEEE Electron Device Lett. 2, 171 (1981).
10. K. Ismail, S.F. Nelson, J.O. Chu, and B.S. Meyerson, Appl. Phys. Lett. 63, 660 (1993).
11. X.L. Lei and C.S. Ting, Phys. Rev. B 32, 1112 (1985).
12. X.L. Lei and C.S. Ting, J. Appl. Phys. 58, 2270 (1985).
13. K. Hirakawa and H. Sakaki, Phys. Rev. B 33, 8291 (1986).
14. V. Venkataraman, C.W. Liu, and J.C. Sturm, J. Vac. Sci. Technol. B 11, 1176 (1993).
15. Y.H. Xie, R. People, J.C. Bean, and K.W. Wecht, Appl. Phys. Lett. 49, 283 (1986).
16. P. J. Price, and, Ann. Phys. 133, 217 (1981).
17. F. Schäffler, D. Többen, H-J. Herzog, G. Abstreiter, and B. Holländer, Semicond. Sci. Technol. 7, 260 (1992).
18. S. Takagi, J.L. Hoyt, J.J. Welser, and J.F. Gibbons, J. Appl. Phys. 80, 1567 (1996).
19. C. Jacoboni and L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).
20. B. Laikhtman, Appl. Phys. Lett. 59, 3021 (1991).
21. T. Ando, J. Phys. Soc. Jpn. 51, 3900 (1982).
22. T. Ando, A.B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
23. H. Sakaki, K. Hirakawa, J. Yoshino, S.P. Svensson, Y. Sekiguchi, T. Hotta, S. Nishi, and N. Miura, Surf. Sci. 142, 306 (1984).
24. K. Seeger, Semiconductor Physics (Springer, Berlin, 1982).
25. F. Stern and S.E. Laux, Appl. Phys. Lett. 61, 1110 (1993).
26. B. Laikhtman and R.A. Kiehl, Phys. Rev. B 47, 10 515 (1993).
27. F.F. Fang and A.B. Fowler, Phys. Rev. B 169, 619 (1968).
28. F.F. Fang and A.B. Fowler, J. Appl. Phys. 41, 1825 (1970).
29. K. Hess and C.T. Sah, Phys. Rev. B 10, 3375 (1974).
30. K. Nakamura, Surf. Sci. 58, 48 (1976).
31. J. Shah and A. Pinczuk, Appl. Phys. Lett. 44, 322 (1984).
32. K. Hirakawa and H. Sakaki, Appl. Phys. Lett. 49, 889 (1986).
33. K. Hirakawa, M. Grayson, D.C. Tsui, and Ç. Kurdak, Phys. Rev. B 47, 16 651 (1993).