Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6 and Si/Si0.7Ge0.3 quantum wells: Evidence for two-dimensional acoustic phonons

Applied Physics Letters

Volumn 70, Issue 25, 1997, Pages 3422-3424

  Song, S H ^a   Pan, Wei ^a   Tsui, D C ^a   Xie, Y H ^b   Monroe, Don ^b  

^a Princeton University   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001667904     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119190     Document Type: Article

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