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7
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84926868781
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The detailed derivations of this paper plus the changes necessary when inertia is important appear in NRL Memorandum Report NO. 6444, 1989, available upon request.
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9
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84926868407
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Superlatt. Microstruct. (to be published).
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Ancona, M.G.1
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11
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84915288829
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Partial results from this work appeared in
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Partial results from this work appeared in Bull. Am. Phys. Soc. 33, 786 (1988),
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(1988)
Bull. Am. Phys. Soc.
, vol.33
, pp. 786
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12
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84926824601
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and in Proceedings of the 1st International Vacuum Microelectric Conference, Williamsburg, Virginia, 1988 (unpublished).
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13
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84926868406
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A higher-order quantum-mechanical effect not captured by the density-gradient theory is the quantum reflection phenomenon observed in some tunneling experiments;
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15
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84926846648
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The notion of a planar-averaged continuum theory (Ref. 6) plus the fact that the changes themselves are spread out by the Pauli principle lead one to expect that the continuum approach will be particularly robust.
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24
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84926846647
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This approach is equivalent to the use of a simple relaxation-time approximation in the Wigner-Boltzmann equation, e.g., see Refs. 5 and 9.
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26
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84944485155
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The words ``surface recombination condition'' and ``surface recombination velocity'' refer, of course, to the similarity between (3.5b) and the well-known Shockley surface recombination boundary condition [, ]. In addition to having the same form, we note that neither (3.5b) nor the Shockley condition is applied at an actual physical boundary and that, for both, the recombination velocity is not simply a material surface coefficient but depends on bulk properties also.
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(1949)
W. Shockley, Bell Syst. Tech. J.
, vol.28
, pp. 435
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27
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84926868405
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This statement is based entirely on numerical calculations for equilibrium situations (Ref. 8); we have no general proof.
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29
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0003625036
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The singular nature of (3.1c) associated with the small parameter multiplying d2φ /dx2 is well known to semiconductor device modelers, e.g., see, Springer-Verlag, New York, Chap. 4. The singular nature of (3.1a) and (3.1b), arising from the small parameter multiplying d/dx[(1/s)(d2s/dx2)], shares the same physical origin (small size of b or h) as the singular behavior of the Schrödinger equation. It is of interest to note, however, that mathematically the singular behavior of (3.1a) and (3.1b) and of the Schrödinger equation differ in character. The latter equation often exhibits wavelike solutions which break down globally as the small parameter vanishes. In contrast, for (3.1a) and (3.2b) solutions always decay and the breakdown is localized in boundary layers.
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(1986)
The Stationary Semiconductor Device Equations
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Markowitch, P.A.1
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