Contamination in molecular beam epitaxy: The role of arsenic drag effect

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1270-1277

  Wasilewski, Z R ^a   Rolfe, S J ^a   Wilson, R A ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b LABORATORY FOR PHYSICAL SCIENCES   (United States)

Author keywords

Contamination; MBE; Molecular scattering

Indexed keywords

ALUMINUM; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; MOLECULAR BEAM EPITAXY; MOLECULES; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

MOLECULAR SCATTERING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031141226     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01229-8     Document Type: Article

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