Initial growth of heteroepitaxial 3C-SiC on Si using energetic species

Applied Physics Letters

Volumn 77, Issue 5, 2000, Pages 654-656

  Tsubouchi, Nobuteru ^a   Chayahara, Akiyoshi ^a   Kinomura, Atsushi ^a   Horino, Yuji ^a  

^a OSAKA NATIONAL RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001328606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127075     Document Type: Article

References (20)

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