Formation of voids in Ti-salicided BF+2-doped submicron polysilicon lines

Journal of Applied Physics

Volumn 87, Issue 12, 2000, Pages 8401-8406

  Chua, H N ^a   Pey, K L ^a   Lai, W H ^a   Siah, S Y ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001303175     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373554     Document Type: Article

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