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Volumn , Issue , 1996, Pages 73-76
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Modeling of local reduction in TiSi2 and CoSi2 growth near spacers in MOS technologies: influence of mechanical stress and main diffusing species
a
a
France Telecom
(France)
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Author keywords
[No Author keywords available]
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
COMPUTER SIMULATION;
DIFFUSION IN SOLIDS;
ELECTRIC RESISTANCE;
MATHEMATICAL MODELS;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
STRESSES;
MAIN DIFFUSING SPECIES;
MECHANICAL STRESS EFFECTS;
SILICIDE GROWTH;
INTEGRATED CIRCUIT MANUFACTURE;
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EID: 0030400657
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (7)
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References (11)
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