Characterization and removal of residual defects in high dose, very low energy BF+2-implanted (001)Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 121, Issue 1-4, 1997, Pages 291-294

  Yang, J J ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BORON COMPOUNDS; CRYSTAL DEFECTS; FLUORINE COMPOUNDS; ION IMPLANTATION; IONS; REMOVAL;

DEFECT REMOVAL;

SILICON;

EID: 0031546168     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00443-0     Document Type: Article

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