Line-width dependence of void formation in TI-salicided BF2-doped polysilicon lines

Materials Research Society Symposium - Proceedings

Volumn 564, Issue , 1999, Pages 91-99

  Chua, H N ^a   Pey, K L ^a   Siah, S Y ^b   Lim, E H ^b   Ho, C S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; TITANIUM COMPOUNDS;

POLYSILICON LINES; VOID FORMATION;

ELECTRIC LINES;

EID: 0033279426     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-564-91     Document Type: Article

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