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Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 274-278

Microstructural studies of GaN grown on (0001) sapphire by MOVPE

(3) Vennegues, P a Beaumont, B a Gibart, P a

a Centre de Recherches sur l'Hétéroepitaxie et Ses Applications (France)

Author keywords

Microstructures; Nanopipes; Transmission electron microscopy

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SEMICONDUCTOR GROWTH; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; GALLIUM NITRIDE; NANOCAVITIES; NANOPIPES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0000490050 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01866-1 Document Type: Article

Times cited : (8)

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