Excitation wavelength and saturation effects on gallium nitride photoluminescence

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 583-587

  Banas, Mike ^a   Liu, Guangtian ^a   Ramer, Jeff ^a   Zheng, Kang ^a   Hersee, Steve ^a   Malloy, Kevin ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLOR; EMISSION SPECTROSCOPY; LASER APPLICATIONS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOCHROMATORS; NITRIDES; OPTICAL PUMPING; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTOR GROWTH;

BANDGAP; EXCITATION WAVELENGTH; GALLIUM NITRIDE; MODE LOCKED LASER; POWER DEPENDENCE; YELLOW EMISSION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029726097     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)