The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses

Applied Physics Letters

Volumn 74, Issue 22, 1999, Pages 3329-3331

  Schmidt, D C ^a   Svensson, B G ^a   Godey, S ^b   Ntsoenzok, E ^b   Barbot, J F ^c   Blanchard, C ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Centre National de la Recherche Scientifique   (France)

^c UNIVERSITÉ DE POITIERS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001238319     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123334     Document Type: Article

References (24)

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