Proximity gettering of platinum in proton irradiated silicon

Journal of Applied Physics

Volumn 84, Issue 8, 1998, Pages 4214-4218

  Schmidt, D C ^a,c   Svensson, B G ^a   Keskitalo, N ^a   Godey, S ^b   Ntsoenzok, E ^b   Barbot, J F ^c   Blanchard, C ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Centre National de la Recherche Scientifique   (France)

^c UNIVERSITÉ DE POITIERS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001079637     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368695     Document Type: Article

References (34)

1. S. Kalbitzer, Nucl. Instrum. Methods Phys. Res. B 63, 1 (1992).
2. J. S. Williams, R. G. Elliman, M. C. Ridgway, C. Jagadish, S. L. Ellingboe, R. Goldberg, M. Petravic, W. C. Wong, Z. Dezhang, E. Nygren, and B. G. Svensson, Nucl. Instrum. Methods Phys. Res. B 80/81, 507 (1993).
3. G. F. Cerofolini and M. L. Polignano, J. Appl. Phys. 55, 579 (1984).
4. A. Goetzberger and W. Shockley, J. Appl. Phys. 31, 1821 (1960).
5. P. Rohr, J. J. Grob, and P. Siffert, Nucl. Instrum. Methods Phys. Res. B 80/81, 640 (1993).
6. W. Lerch, N. A. Stolwijk, H. Mehrer, and C. Poisson, Semicond. Sci. Technol. 10, 1257 (1995).
7. S. Coffa, G. Franco, C. M. Camalleri, and A. Giraffa, J. Appl. Phys. 80, 161 (1996).
8. A. Cacciato, C. M. Camalleri, G. Franco, V. Raineri, and S. Coffa, J. Appl. Phys. 80, 4322 (1996).
9. E. Spiecker, M. Seibt, and W. Schröter, Phys. Rev. B 55, 9577 (1997).
10. A. Kinomura, J. S. Williams, J. Wong-Leung, and M. Petravic, Nucl. Instrum. Methods Phys. Res. B 127/128, 297 (1997).
11. V. Raineri, A. Battaglia, and E. Rimini, Nucl. Instrum. Methods Phys. Res. B 96, 249 (1995).
12. B. Holm and K. Bonde Nielsen, J. Appl. Phys. 78, 5970 (1995).
13. K. Graff, in "Metal Impurities in Silicon-Device Fabrication," Springer Series in Materials Science, Vol. 24 (Springer, New York, 1995), p. 99.
14. J.-U. Sachse, E. Ö. Sveinbjömsson, W. Jost, J. Weber, and H. Lemke, Phys. Rev. B 55, 16176 (1997).
15. A. Hallén, D. Fenyö, B. U. R. Sundqvist, R. E. Johnson, and B. G. Svensson, J. Appl. Phys. 70, 3025 (1991).
16. B. G. Svensson, C. Jagadish, A. Hallén, and J. Lalita, Phys. Rev. B 55, 10498 (1997).
17. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, (Pergamon, New York, 1985); for further information and download see also http://www.research.ibm.com/ionbeams/home.htm
18. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
19. U. Gösele, W. Frank, and A. Seeger, Appl. Phys. 23, 361 (1980).
20. F. C. Frank and D. Turnbull, Phys. Rev. 104, 617 (1956).
21. S. Mantovani, F. Nava, C. Nobili, and G. Ottaviani, Phys. Rev. B 33, 5536 (1986).
22. H. Zimmermann and H. Ryssel, Appl. Phys. A: Solids Surf. 55, 121 (1992).
23. W. Schröter and M. Seibt, Deep Levels of Metal Impurities in Silicon, in EMIS data reviews series, "Properties of Silicon" (in press).
24. H. Kauppinen, C. Corbel, K. Skog, K. Saarinen, T. Laine, P. Hautojärvi, P. Desgardin, and E. Ntsoenzok, Phys. Rev. B 55, 9598 (1997).
25. B. G. Svensson, Energy Levels, Structure, and Properties of Point Defects Induced by Ion-Implantation and Electron-Irradiation, in EMIS data reviews series, "Properties of Silicon" (in press).
26. S. Dannefaer, P. Mascher, and D. Kerr, J. Appl. Phys. 73, 3740 (1993).
27. A. Uedono, S. Tanigawa, J. Sugiura, and M. Ogasawara, Jpn. J. Appl. Phys., Part 1 28, 1293 (1989).
28. W. Puff and X. Meng, J. Appl. Phys. 73, 648 (1993).
29. L. Sealy, R. C. Barklie, W. L. Brown, and D. C. Jacobson, Nucl. Instrum. Methods Phys. Res. B 80/81, 528 (1993).
30. S. K. Estreicher, J. L. Hastings, and P. A. Fedders, Appl. Phys. Lett. 70, 432 (1997).
31. J. L. Hastings, S. K. Estreicher, and P. A. Fedders, Phys. Rev. B 56, 10215 (1997).
32. J. L. Benton, S. Libertino, P. Kringhøj, D. J. Eaglesham, J. M. Poate, and S. Coffa, J. Appl. Phys. 82, 120 (1997).
33. G. R. Lahiji, A. R. Peaker, and B. Hamilton, Inst. Phys. Conf. Ser. 104, 239 (1989).
34. V. Raineri, P. G. Fallica, G. Percolla, A. Battaglia, M. Barbagallo, and S. U. Campisano, J. Appl. Phys. 78, 3727 (1995).