Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 127-131

  Schmidt, D C ^a,b   Svensson, B G ^a   Godey, S ^c   Ntsoenzok, E ^c   Barbot, J F ^b   Blanchard, C ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Lab de Métallurgie Physique   (France)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

Defect; DLTS; Gettering; Interstitial; Platinum; Vacancy

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ELECTRON ENERGY LEVELS; ION IMPLANTATION; PLATINUM; SEMICONDUCTING SILICON;

GETTERING; INTERSTITIAL; VACANCY;

PROTON IRRADIATION;

EID: 0032740034     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00587-4     Document Type: Article

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