Si nanofabrication using AFM field enhanced oxidation and anisotropic wet chemical etching

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 652-659

  Morimoto, K ^a   Araki, K ^a   Yamashita, K ^a   Monta, K ^a   Niwa, M ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

AFM; Anisotropic wet etching; Field enhanced oxide; Si nanofabrication; Si quantum wire; SIMOX

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; NANOTECHNOLOGY; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WIRES; SURFACE STRUCTURE; THIN FILMS;

ANISOTROPIC WET ETCHING; SEPARATION BY IMPLANTED OXYGEN (SIMOX);

SILICON WAFERS;

EID: 0031548148     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80159-6     Document Type: Article

References (18)

1. J.A. Dagata, J. Schneir, H.H. Harary, C.J. Evance, M.T. Postek, J. Bennett, Appl. Phys. Lett. 56 (1990) 2001.
2. J.A. Dagata, J. Schneir, H.H. Harary, J. Bennet, W. Tseng, J. Vac. Sci. Technol. B 9 (1991) 1384.
3. J.A. Dagata, W. Tseng, J. Bennet, E.A. Dobisz, J. Schneir, H.H. Harary, J. Vac. Sci. Technol. A 10 (1992) 2105.
4. E.S. Snow, P.M. Campbell, P.J. McMarr, Appl. Phys. Lett. 63 (1993) 749.
5. H. Sugimura, T. Yamamoto, N. Nakagiri, M. Miyashita, T. Onuki, Appl. Phys. Lett. 65 (1994) 1569.
6. H.C. Day, D.R. Allee, Appl. Phys. Lett. 62 (1993) 2691.
7. M. Yasutake, Y. Ejiri, T. Hattori, Jpn. J. Appl. Phys. 32 (1993) L1021.
8. E.S. Snow, P.M. Campbell, Appl. Phys. Lett. 64 (1994) 1932.
9. H. Sugimura, N. Nakagiri, Nanotechnology 6 (1995) 25.
10. K. Araki, M. Morimoto, K. Morita, M. Niwa, Y. Hirai, Digest of Papers, 1996 Int. Micro Process Conference, Kitakyushu, Japan, 1996, p. 262.
11. K. Araki, M. Morimoto, K. Morita, M. Niwa, Y. Hirai, Jpn. J. Appl. Phys. 35 (1996) 6679.
12. H. Sugimura, K. Okiguchi, N. Nakagiri, Jpn. J. Appl. Phys. 35 (1996) 3749.
13. T. Nakajima, T. Yano, I. Hamaguchi, M. Tachimori, Proceedings of 1994 IEEE Int. SOI Conf., Massachusetts, USA, 1994, p. 81.
14. R.M. Finne, D.L. Klein, J. Electrochem. Soc. 114 (1967) 965.
15. K. Shimizu, S. Oda, M. Matsumura, Jpn. J. Appl. Phys. 27 (1988) L1778.
16. Y. Nakajima, Y. Takahashi, S. Horiguchi, K. Iwadate, H. Namatsu, K. Kurihara, M. Tabe, Ext. Abst. of 1995 Int. Conf. Solid State and Materials, Tokyo, Japan, 1994, p. 538.
17. P.I. Jorgensen, J. Chem. Phys. 37 (1963) 874.
18. S. Odanaka, A. Hiroki, K. Ohe, K. Moriyama, H. Umimoto, IEEE Trans. Computer-Aided Design 10 (1991) 619.