Current-dependent silicon oxide growth during scanned probe lithography

Electronics Letters

Volumn 32, Issue 15, 1996, Pages 1411-1412

  Ruskell, T G ^a   Pyle, J L ^a   Workman, R K ^a   Yao, X ^a   Sarid, D ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

Atomic force microscopy; Lithography

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRON TUNNELING; HYDROGEN; IONS; LITHOGRAPHY; OXIDATION; OXIDES; SEMICONDUCTOR GROWTH; SILICA;

SCANNED PROBE LITHOGRAPHY; SILICON OXIDE; SILICON OXIDE GROWTH;

NANOTECHNOLOGY;

EID: 0030194955     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960882     Document Type: Article

References (7)

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