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Journal of Applied Physics

Volumn 80, Issue 1, 1996, Pages 588-590

Formation of two-dimensional electron and hole gases in undoped AlxGa1-xAs/GaAs heterostructures

(1) Hirayama, Y a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042048996 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.362722 Document Type: Article

Times cited : (13)

References (15)

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