Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates

Physica B: Condensed Matter

Volumn 227, Issue 1-4, 1996, Pages 95-97

  Hiramoto, T ^a   Ishikuro, H ^a   Fujii, T ^a   Saraya, T ^a   Hashiguchi, G ^a,b   Ikoma, T ^a,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b NIPPON STEEL CORPORATION   (Japan)

^c Texas Instruments Japan Ltd   (Japan)

Author keywords

Coulomb blockade; Quantum dots; Si quantum wire; SOI

Indexed keywords

ANISOTROPY; ELECTRON TUNNELING; ETCHING; MANUFACTURE; SILICON;

COULOMB BLOCKADE; QUANTUM DOTS; QUANTUM WIRE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030232623     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(96)00363-8     Document Type: Article

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