Monte Carlo estimation of excess noise factor in thin p+-i-n+ avalanche photodiodes

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 631-634

  Ong, D S ^a   Li, K F ^a   Rees, G J ^a   Dunn, G M ^a   David, J P R ^a   Robson, P N ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE PHOTODIODES; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; IONIZATION; MONTE CARLO METHODS;

EXCESS NOISE FACTOR; LOW NOISE; MONTE CARLO MODEL; MONTE-CARLO ESTIMATION; PATH LENGTH DISTRIBUTION;

PHOTODIODES;

EID: 3342975223     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711756     Document Type: Conference Paper

References (8)

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