Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 158-160

  Saddow, S E ^a   Mazzola, M S ^a   Rendakova, S V ^b   Dmitriev, V A ^c,d  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c HOWARD UNIVERSITY   (United States)

^d TDI Inc   (United States)

Author keywords

Chemical vapor deposition; Epilayer; Micropipes; Reduced micropipe density

Indexed keywords

EPILAYERS; HOMOEPITAXIAL GROWTH; MICROPIPE DENSITY; POTASSIUM HYDROXIDE;

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; EPITAXIAL GROWTH; ETCHING; POTASSIUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SUBSTRATES; SURFACE ROUGHNESS;

SILICON CARBIDE;

EID: 0032642137     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00492-9     Document Type: Article

References (5)

1. S. Rendakova, V. Dmitriev, Abstracts of Fall'97 MRS Meeting, December 1-5, 1997, Boston, MA, pp. 149-150.
2. TDI, Gaithersburg, MD 20877; http//tdii.com.
3. S. Rendakova, N. Kuznetsov, N. Savkina, M. Rastegaeva, A. Andreev, M. minbaeva, A. Morozov, V. Dimitreev, reported at the MRS Spring 1998 meeting, to be published in the MRS proceedings.
4. Rendakova S.V., Nikitina I.P., Tregubova A.S., Dimitreev V.A. J. Electron Mater. 27:1998;292.
5. Rendakova S., Ivantsov V., Dimitreev V. Mater. Sci. Forum. 264-268:1998;163-166.