Light emitting devices using porous silicon and porous silicon carbide

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 501-504

  Mimura, H ^a   Matsumoto, T ^b   Kanemitsu, Y ^b  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CURRENT DENSITY; ELECTROLUMINESCENCE; HETEROJUNCTIONS; INDIUM COMPOUNDS; POROUS SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

BRIGHTNESS; INDIUM TIN OXIDE; LOW THRESHOLD VOLTAGE; RECTIFICATION;

LIGHT EMITTING DIODES;

EID: 0029702908     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00278-2     Document Type: Article

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