Effect of growth temperature on epitaxial lateral overgrowth of GaAs on Si substrate

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 630-634

  Chang, Y S ^a   Naritsuka, S ^a   Nishinaga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; LIQUID PHASE EPITAXY; MOLTEN MATERIALS; POTASSIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SUBSTRATES; THERMAL EFFECTS;

EPITAXIAL LATERAL OVERGROWTH (ELO);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031547415     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00067-5     Document Type: Article

References (4)

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2. S. Sakawa and T. Nishinaga, Jpn. J. Appl. Phys. 31 (1992) L359.
3. H. Mori, Y. Itoh, M. Tachikawa and M. Sugo, in: Extended Abstracts 1992 Autumn Meeting of the Japan Society of Applied Physics and Related Societies, No. 1, p. 304.
4. M. Tachikawa, T. Yamada, T. Sasaki, H. Mori and Y. Kadota, Jpn. J. Appl. Phys. 34 (1995) L657.