Effect of biaxial strcdn on cubic and hexagonal gan analyzed by tight-binding method

Japanese Journal of Applied Physics

Volumn 34, Issue 11, 1995, Pages L1513-L1516

  Nido, Masaaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Band structure; Biaxial strain; GaN; Semiconductor lasers; Tight binding method

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CRYSTAL LATTICES; ELASTICITY; LATTICE CONSTANTS; NITRIDES; SEMICONDUCTOR LASERS; STRAIN; TENSILE STRENGTH; VECTORS;

BIAXIAL STRAIN; CRYSTAL WAVE NUMBER; ELASTIC STIFFNESS; GALLIUM NITRIDE; SPIN ORBIT INTERACTION; SPLIT OFF ENERGY; TIGHT BINDING HAMILTONIANS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029405127     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.L1513     Document Type: Article

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