P-gan/n-ingan/n-gan double-heterostructure blue-light-emitting diodes

Japanese Journal of Applied Physics

Volumn 32, Issue 1 A, 1993, Pages L8-L11

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Mukai, Takashi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

Blue band edge emission; Blue LEDs; Double heterostructure; External quantum efficiency; Output power; P GaN n InGaN n GaN

Indexed keywords

EFFICIENCY; FABRICATION; HETEROJUNCTIONS; LIGHT EMISSION; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

BLUE BAND EDGE EMISSION; BLUE LIGHT EMITTING DIODES; DOUBLE HETEROSTRUCTURE; EXTERNAL QUANTUM EFFICIENCY; FULLWIDTH AT HALF MAXIMUM; OUTPUT POWER;

LIGHT EMITTING DIODES;

EID: 0027187087     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.L8     Document Type: Article

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