Growth of single crystal GaN substrate using hydride vapor phase epitaxy

Journal of Crystal Growth

Volumn 99, Issue 1-4, 1990, Pages 381-384

  Naniwae, Kouichi ^a   Itoh, Shigetoshi ^a   Amano, Hiroshi ^a   Itoh, Kenji ^a   Hiramatsu, Kazumasa ^a   Akasaki, Isamu ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--GROWING; PHOTOLUMINESCENCE;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; SINGLE CRYSTALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0025232939     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(90)90548-Y     Document Type: Article

References (10)

1. Proc. 14th Intern. Symp. on GaAs and Related Compounds
2. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN
3. Proc. 9th Intern. Symp. on GaAs and Related Compounds