Highly p-typed mg-doped gan films grown with gan buffer layers

Japanese Journal of Applied Physics

Volumn 30, Issue 10A, 1991, Pages L1708-L1711

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Mukai, Takashi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

Buffer Layer; Hall effect measurement; Hole concentration; Hole mobility; Mg doped GaN; Resistivity

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE;

ATOMIC LAYER EPITAXY; EPITAXIAL GROWTH KINETICS; HALOGEN TRANSPORT ATOMIC LAYER EPITAXY; IN SITU MONITORING; SURFACE PHOTOABSORPTION MEHTOD;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0026241977     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L1708     Document Type: Article

References (2)

1. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki: Jpn. J. Appl. Phys. 28 (1989) L2112.
2. H. Amano and I. Akasaki: Oyo Buturi 60 (1991) 163 [in Japanese].