Heteroepitaxial growth and the effect of strain on the luminescent properties of gan films on (11-0) and (0001) sapphire substrates

Japanese Journal of Applied Physics

Volumn 27, Issue 8 A, 1988, Pages L1384-L1386

  Amano, Hiroshi ^a   Hiramatsu, Kazumasa ^a   Akasaki, Isamu ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

11201 and (0001) sapphire substrate; Cstrain; Deformation potential; GaN; Heteroepitaxial growth; Photoluminescence; Thermal expansion coefficient

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; PHOTOLUMINESCENCE;

BAND GAP ENERGY; DEFORMATION POTENTIAL; HETEROEPITAXIAL GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0024056660     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.27.L1384     Document Type: Article

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