Effect of Si doping on structural, photoluminescence and electrical properties of GaN

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 195-197

  Shmidt, N M ^a   Lebedev, A V ^a   Lundin, W V ^a   Pushnyi, B V ^a   Ratnikov, V V ^a   Shubina, T V ^a   Tsatsul'nikov, A A ^a   Usikov, A S ^a   Pozina, G ^b   Monemar, B ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CARRIER MOBILITY; COMPRESSIVE STRESS; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICON; STRESS RELAXATION;

CARRIER TRANSPORT MECHANISM; COLUMNAR STRUCTURE; EDGE DISLOCATIONS; EPITAXIAL LAYERS; MICROPIPES; STRUCTURAL PECULIARITIES; VERTICAL SCREW;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528936     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00400-0     Document Type: Article

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