A p-Well GaAs MESFET Technology for Mixed-Mode Applications

IEEE Journal of Solid-State Circuits

Volumn 25, Issue 6, 1990, Pages 1544-1549

  Allstot, David J ^b  

^a HEWLETT PACKARD COMPANY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, HYBRID; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRICALLY CONTROLLED BACKGATE; GALLIUM ARSENIDE DEVICES; HYBRID CIRCUITS; MESFET TECHNOLOGY;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0025540601     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.62191     Document Type: Article

References (12)

1. C. Kocot and C. A. Stolte, “Backdating in GaAs MESFET's,” IEEE Trans. Electron. Dev., vol. ED-29, pp. 1059–1064, July 1982.
2. C. Camacho-Penalosa and C. S. Atchison, “Modeling of frequency dependence of output impedance of a microwave MESFET at low frequencies,” IEE Electron, Lett., vol. 21, pp. 528–529, June 1985.
3. T. Itoh and H. Yanai, “Stability and performance of interfacial problem in GaAs MESFET's,” IEEE Trans. Electron. Dev., vol. ED-27, pp. 1037–1045, June 1980.
4. R. Y. Koyama et al., “‘Parasitic’ effects and their impact on gallium arsenide integrated circuits,” in Dig. Semi-Insulating III-V Materials Conf., May 1988, pp. 203–212.
5. E. P. Finchem et al., “Reduction of the backgating effect in GaAs MESFET IC's by charge trapping at the backgate electrode,” in Tech. Dig. IEEE GaAs IC Symp., Nov. 1988, pp. 231–234.
6. D. D'Avonzo, “Proton isolation for GaAs integrated circuits,” IEEE Trans. Electron Dev., vol. ED-29, no. 7, pp. 1051-1Q59, July 1982.
7. P. C. Canfield, S. C. F. Lam, and D. J. Allstot, “Modeling of frequency and temperature effects in GaAs MESFET's,” IEEE J. Solid-State vol. Feb. 1990.
8. L. E. Larson, C. S. Chou, and M. J. Delaney, “An ultrahigh-speed GaAs MESFET operational amplifier,” IEEE J. Solid-State Circuits, vol. 24, pp. 1523–1528, Dec. 1989.
9. P. C. Canfield and D. J. Allstot, “A p-well GaAs MESFET technology,” in ISSCC Dig. Tech. Papers, Feb. 1990, pp. 242–243.
10. D. E. Holmes, R. T. Chen, K. R. Elliott, C. G. Kirkpatrick, and P. W. Yu, “Compensation mechanisms in liquid encapsulated Czochralski GaAs: Importance of melt stoichiometry,” IEEE Trans. Electron. Dev., vol. ED-29, no. 7, 1045–1051, July 1982.
11. G. M. Martin et al., ‘‘Compensation mechanisms in GaAs,” J. Appl. Phys., vol. 51, pp. 2840–2852, May 1980.
12. J. Lagowski et al., “Origin of the 0.82 eV electron trap in GaAs and its annihilation by shallow donors,” Appl. Phys. Lett., vol. 40, pp. 342–344, 1982.