Manufacturability of dummy-gate self-aligned LDD GaAs MESFETs for high volume production

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1994, Pages 119-122

  Nakajima, S ^a   Ishii, G ^a   Saito, Y ^a   Kuwata, N ^a   Fukuzawa, T ^a   Koike, K ^a   Nishizawa, H ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER CIRCUITS; CAPACITANCE; CONTROLLABILITY; ELECTRODES; GATES (TRANSISTOR); ION IMPLANTATION; OPTIMIZATION; PHOTORESISTS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR PLASMAS;

DUMMY GATE; GATE ELECTRODE REGIONS; GATE METAL; ISOTROPHIC ETCHING; LIGHTLY DOPED DRAIN; PATTERN IN VERSION; SELF ALIGNED GATE; SINGLE RESIST LAYER DUMMY GATE; T SHAPED GATE;

MESFET DEVICES;

EID: 0028712958     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)