Defect creation and removal in hydrogenated amorphous silicon predicted by the defect-pool model and revealed by the quasistatic capacitance of metal-insulator-semiconductor structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 16, 1997, Pages R10181-R10184

  Kleider, J ^a   Dayoub, F ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000427546     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.R10181     Document Type: Article

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