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Volumn 55, Issue 16, 1997, Pages R10181-R10184

Defect creation and removal in hydrogenated amorphous silicon predicted by the defect-pool model and revealed by the quasistatic capacitance of metal-insulator-semiconductor structures

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EID: 0000427546     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.R10181     Document Type: Article
Times cited : (7)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.