Electrical Properties of Amorphous Silicon Transistors and MIS–Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations

Journal of the Electrochemical Society

Volumn 140, Issue 12, 1993, Pages 3679-3683

  Rolland, A ^a   Richard, J ^a   Kieider, J P ^b   Mencaraglia, D ^b  

^a ORANGE LABS   (France)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; LIQUID CRYSTAL DISPLAYS; SILICON COMPOUNDS; THIN FILMS; TRANSISTORS;

AMORPHOUS SILICON TRANSISTORS; BOTTOM NITRIDE (BN) CONFIGURATIONS; TOP NITRIDE (TN);

MIS DEVICES;

EID: 0027735508     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2221149     Document Type: Article

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