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Volumn 60, Issue 4, 1989, Pages 531-546

The defect density in amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS--DEFECTS;

EID: 0024752256     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642818908205926     Document Type: Article
Times cited : (311)

References (35)
  • 6
    • 41149132606 scopus 로고
    • 1982, Phys. Rev. B, 25, 5559
    • JACKSON, W. B., and AMER, N. M., 1981, J. Phys., Paris, 42, C4-C293; 1982, Phys. Rev. B, 25, 5559.
    • (1981) J. Phys., Paris , vol.42 , pp. CC4-C293
    • Jackson, W.B.1    Amer, N.M.2
  • 12
    • 0003044390 scopus 로고
    • edited by J. D. Joannopoulos and G. Lucovsky (Berlin: Springer)
    • Ley, L., 1984, The Physics of Hydrogenated Amorphous Silicon, Vol. II, edited by J. D. Joannopoulos and G. Lucovsky (Berlin: Springer), p. 61.
    • (1984) The Physics of Hydrogenated Amorphous Silicon , vol.2 , pp. 61
    • Ley, L.1
  • 27
    • 0023383357 scopus 로고
    • 1988, Adv. Solid St. Phys., 28, 1
    • STUTZMANN, M., 1987, Phil. Mag. B, 56, 63; 1988, Adv. Solid St. Phys., 28, 1.
    • (1987) Phil. Mag. B , vol.56 , pp. 63
    • Stutzmann, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.