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Physical Review B

Volumn 48, Issue 15, 1993, Pages 10815-10827

Improved defect-pool model for charged defects in amorphous silicon

(2) Powell, M J a Deane, S C a

a PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001761379 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.48.10815 Document Type: Article

Times cited : (263)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.