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Volumn 35, Issue 3, 1987, Pages 1316-1333

Thermal-equilibrium processes in amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 35949008939     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.35.1316     Document Type: Article
Times cited : (268)

References (53)
  • 1
    • 84927326785 scopus 로고    scopus 로고
    • N. F. Mott and E. A. Davis, Electronic Processes in Non-crystalline Materials (Clarendon, Oxford, 1979).
  • 5
    • 84927326784 scopus 로고    scopus 로고
    • See, for example, J. Stuke, in Proceedings of the 7th International Conference on Amorphous and Liquid Semiconductors, edited by W. E. Spear, (CICL, Edinburgh, 1977), p. 406.
  • 14
    • 0022523924 scopus 로고
    • A square root dependence on gas concentration is always observ, in some cases (e.g., As doping) the dependence on the solid phase concentration is different. The origin of this behavior is unclear, and is discussed by
    • (1986) Philos. Mag. B , vol.53 , pp. L15
    • However1    Stutzmann, M.2
  • 39
    • 84927326781 scopus 로고    scopus 로고
    • The reactions discussed here are similar to those considered in connection with the Staebler-Wronski effect in doped a-Si:H by W. B. Jackson, M. Stutzmann, and C. C. Tsai, Solar Cells (in press).
  • 42
    • 0004211146 scopus 로고
    • edited by, R. W. Douglas, B. Ellis, Wiley-Interscience, New York
    • (1972) Amorphous Materials


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.