Device quality SiO2 deposited by distributed electron cyclotron resonance plasma enhanced chemical vapor deposition without substrate heating

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 31, Issue 10 A, 1992, Pages 1404-1407

  Jiang, Nan ^a   Hugon, Marie Christine ^a   Agius, Bernard ^a   Kretz, Thierry ^a   Plais, Francois ^a   Pribat, Didier ^a   Carriere, Thierry ^a   Puech, Michel ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRON RESONANCE; MOS DEVICES; PLASMA DEVICES; SEMICONDUCTING SILICON;

ELECTRON CYCLOTRON RESONANCE;

SILICA;

EID: 0026930311     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)