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Volumn 41, Issue 17, 1990, Pages 12150-12161

Defect formation in a-Si:H

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000393405     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.41.12150     Document Type: Article
Times cited : (138)

References (48)
  • 12
    • 84926559758 scopus 로고    scopus 로고
    • V. Heine, in Solid State Physics, edited by H. Ehrenreich, F. Seitz, and D. Turnbull (Academic, New York, 1980), Chap. 1, p. 188.
  • 22
    • 84926571008 scopus 로고    scopus 로고
    • The term defect pool was first used by L. Ley to describe the observed Fermi-energy-dependent shifts in the defect levels in a-Si:H.
  • 26
    • 84926579485 scopus 로고    scopus 로고
    • K. Winer and L. Ley, in Amorphous Silicon and Related Materials, edited by H. Fritzsche (World Scientific, Singapore, 1988), p. 365; L. Ley and K. Winer, in Proceedings of the 19th International Conference on the Physics of Semiconductors, edited by W. Zawadzki (PIOP, Warsaw, 1989), p. 1633.
  • 42
    • 84926563647 scopus 로고    scopus 로고
    • Hydrogenated Amorphous Silicon, edited by J. I. Pankove, Vol. a of Semiconductors and Semimetals (Academic, New York, 1984).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.