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Volumn 74, Issue 11, 1993, Pages 6655-6666

Field-effect conductance in amorphous silicon thin-film transistors with a defect pool density of states

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[No Author keywords available]

Indexed keywords


EID: 0001533367     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.355108     Document Type: Article
Times cited : (39)

References (27)
  • 13
    • 31544431662 scopus 로고
    • This article contains an error in the labeling of the vertical axis of Fig. 3. The axis should be labeled [formula omitted] rather than [formula omitted] since the numbers correspond to the total density of one-electron states. The number of amphoteric dangling bonds is half this number. This does not affect the conclusion reached in the article in any way
    • (1993) J. Appl. Phys. , vol.73 , pp. 2895
    • Deane, S.C.1    Clough, F.J.2    Milne, W.I.3    Powell, M.J.4
  • 18
    • 2842538052 scopus 로고
    • We use a temperaturedependent valencebandtail slope of the form [formula omitted] as suggested by
    • (1992) Philos. Mag. Lett. , vol.66 , pp. 147
    • Stutzman, M.1
  • 23
    • 0000606949 scopus 로고
    • The temperature independence of the electron spin signal shows that [formula omitted] [ see, and references therein]. Many other experiments to determine U need to be reinterpreted in light of the defect pool model.
    • (1992) Phys. Rev. Lett. , vol.68 , pp. 2972
    • Lee, J.-K.1    Schiff, E.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.